Crystals, Vol. 13, Pages 1221: H-Terminated Diamond MOSFETs on High-Quality Diamond Film Grown by MPCVD

Crystals, Vol. 13, Pages 1221: H-Terminated Diamond MOSFETs on High-Quality Diamond Film Grown by MPCVD

Crystals doi: 10.3390/cryst13081221

Authors: Wenxiao Hu Xinxin Yu Tao Tao Kai Chen Yucong Ye Jianjun Zhou Zili Xie Yu Yan Bin Liu Rong Zhang

Diamond-based transistors have been considered as one of the best choices due to the numerous advantages of diamond. However, difficulty in the growth and fabrication of diamond needs to be addressed. In this paper, high quality diamond film with an atomically flat surface was grown by microwave plasma chemical vapor deposition. High growth rate, as much as 7 μm/h, has been acquired without nitrogen doping, and the root mean square (RMS) of the surface roughness was reduced from 0.92 nm to 0.18 nm by using a pre-etched process. H-terminated diamond MOSFETs were fabricated on a high-quality epitaxial diamond layer, of which the saturated current density was enhanced. The hysteresis of the transfer curve and the shift of the threshold voltage were significantly reduced as well.