Electronics, Vol. 12, Pages 3139: Support Vector Regression Model for Determining Optimal Parameters of HfAlO-Based Charge Trapping Memory Devices

Electronics, Vol. 12, Pages 3139: Support Vector Regression Model for Determining Optimal Parameters of HfAlO-Based Charge Trapping Memory Devices

Electronics doi: 10.3390/electronics12143139

Authors: Yifan Hu Fucheng Wang Jingwen Chen Suresh Kumar Dhungel Xinying Li Jang-Kun Song Yong-Sang Kim Duy Phong Pham Junsin Yi

The production and optimization of HfAlO-based charge trapping memory devices is central to our research. Current optimization methods, based largely on experimental experience, are tedious and time-consuming. We examine various fabrication parameters and use the resulting memory window data to train machine learning algorithms. An optimized Support Vector Regression model, processed using the Swarm algorithm, is applied for data prediction and process optimization. Our model achieves a MSE of 0.47, an R2 of 0.98856, and a recognition accuracy of 90.3% under cross-validation. The findings underscore the effectiveness of machine learning algorithms in non-volatile memory fabrication process optimization, enabling efficient parameter selection or outcome prediction.