Electronics, Vol. 13, Pages 1148: Investigation on Synaptic Adaptation and Fatigue in ZnO/HfZrO-Based Memristors under Continuous Electrical Pulse Stimulation

Electronics, Vol. 13, Pages 1148: Investigation on Synaptic Adaptation and Fatigue in ZnO/HfZrO-Based Memristors under Continuous Electrical Pulse Stimulation

Electronics doi: 10.3390/electronics13061148

Authors: Zeyang Xiang Kexiang Wang Jie Lu Zixuan Wang Huilin Jin Ranping Li Mengrui Shi Liuxuan Wu Fuyu Yan Ran Jiang

This study investigates the behavior of memristive devices characterized by oxygen-deficient ZnO and HfZrO films under continuous pulse stimulation. This dynamic reflects the adaptability observed in neural synapses when repeatedly subjected to stress, ultimately resulting in a mitigated response to pressure. Observations show that the conductivity of memristors increases with the augmentation of continuous electrical pulses. However, the momentum of this growth trend gradually diminishes, highlighting the devices’ capability to adapt to repetitive pressure. This adjustment correlates with the transition of biological synapses from short-term to persistent memory stages, aligning with the principles of the Ebbinghaus memory model. The architecture of memristors, integrating ZnO and HfZrO in a layered manner, holds promising prospects in replicating the inherent synaptic features found in biological organisms.