Micromachines, Vol. 14, Pages 2018: Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

Micromachines, Vol. 14, Pages 2018: Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

Micromachines doi: 10.3390/mi14112018

Authors: Stanislav Tyaginov Erik Bury Alexander Grill Zhuoqing Yu Alexander Makarov An De Keersgieter Mikhail Vexler Michiel Vandemaele Runsheng Wang Alessio Spessot Adrian Chasin Ben Kaczer

We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages (Vgs and Vds, respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low Vgs and relatively high Vds. Implementation of this contribution is based on refined modeling of carrier transport for both primary and secondary carriers. To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages {Vgs,Vds}.